| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 370 | 2020 |
| AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018 | 206 | 2018 |
| Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire N Susilo, E Ziffer, S Hagedorn, L Cancellara, C Netzel, NL Ploch, S Wu, ... Photonics Research 8 (4), 589-594, 2020 | 62 | 2020 |
| AlN growth on nano‐patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs S Hagedorn, A Knauer, A Mogilatenko, E Richter, M Weyers physica status solidi (a) 213 (12), 3178-3185, 2016 | 52 | 2016 |
| Stabilization of sputtered AlN/sapphire templates during high temperature annealing S Hagedorn, S Walde, A Mogilatenko, M Weyers, L Cancellara, ... Journal of Crystal Growth 512, 142-146, 2019 | 45 | 2019 |
| Correlation of sapphire off‐cut and reduction of defect density in MOVPE grown AlN A Knauer, A Mogilatenko, S Hagedorn, J Enslin, T Wernicke, M Kneissl, ... physica status solidi (b) 253 (5), 809-813, 2016 | 45 | 2016 |
| Displacement Talbot lithography for nano-engineering of III-nitride materials PM Coulon, B Damilano, B Alloing, P Chausse, S Walde, J Enslin, ... Microsystems & Nanoengineering 5 (1), 52, 2019 | 44 | 2019 |
| The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers M Martens, C Kuhn, T Simoneit, S Hagedorn, A Knauer, T Wernicke, ... Applied Physics Letters 110 (8), 2017 | 44 | 2017 |
| Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs J Glaab, N Lobo-Ploch, HK Cho, T Filler, H Gundlach, M Guttmann, ... Scientific reports 11 (1), 14647, 2021 | 43 | 2021 |
| Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities J Ruschel, J Glaab, N Susilo, S Hagedorn, S Walde, E Ziffer, HK Cho, ... Applied Physics Letters 117 (24), 2020 | 40 | 2020 |
| Status and prospects of AlN templates on sapphire for ultraviolet light‐emitting diodes S Hagedorn, S Walde, A Knauer, N Susilo, D Pacak, L Cancellara, ... physica status solidi (a) 217 (14), 1901022, 2020 | 40 | 2020 |
| Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy S Walde, S Hagedorn, M Weyers Japanese Journal of Applied Physics 58 (SC), SC1002, 2019 | 39 | 2019 |
| Hydride vapor phase epitaxy of GaN boules using high growth rates E Richter, U Zeimer, S Hagedorn, M Wagner, F Brunner, M Weyers, ... Journal of Crystal Growth 312 (18), 2537-2541, 2010 | 28 | 2010 |
| Nanopatterned sapphire substrates in deep-UV LEDs: is there an optical benefit? P Manley, S Walde, S Hagedorn, M Hammerschmidt, S Burger, C Becker Optics Express 28 (3), 3619-3635, 2020 | 26 | 2020 |
| Effect of electron blocking layer doping and composition on the performance of 310 nm light emitting diodes T Kolbe, A Knauer, J Rass, HK Cho, S Hagedorn, S Einfeldt, M Kneissl, ... Materials 10 (12), 1396, 2017 | 26 | 2017 |
| High-quality AlN grown on a thermally decomposed sapphire surface S Hagedorn, A Knauer, F Brunner, A Mogilatenko, U Zeimer, M Weyers Journal of Crystal Growth 479, 16-21, 2017 | 25 | 2017 |
| HVPE of AlxGa1− xN layers on planar and trench patterned sapphire S Hagedorn, E Richter, U Zeimer, D Prasai, W John, M Weyers Journal of crystal growth 353 (1), 129-133, 2012 | 25 | 2012 |
| High power UVB light emitting diodes with optimized n-AlGaN contact layers A Knauer, T Kolbe, J Rass, HK Cho, C Netzel, S Hagedorn, N Lobo-Ploch, ... Japanese Journal of Applied Physics 58 (SC), SCCC02, 2019 | 22 | 2019 |
| Improving AlN crystal quality and strain management on nanopatterned sapphire substrates by high‐temperature annealing for UVC light‐emitting diodes S Hagedorn, S Walde, N Susilo, C Netzel, N Tillner, RS Unger, P Manley, ... physica status solidi (a) 217 (7), 1900796, 2020 | 21 | 2020 |
| AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy S Walde, S Hagedorn, PM Coulon, A Mogilatenko, C Netzel, J Weinrich, ... Journal of Crystal Growth 531, 125343, 2020 | 20 | 2020 |
