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Rui Zhang
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Year
Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs
R Zhang, WS Zhao, WY Yin, ZG Zhao, HJ Zhou
Diamond and Related Materials 52, 25-31, 2015
292015
A comprehensive time-dependent dielectric breakdown lifetime simulator for both traditional CMOS and FinFET technology
K Yang, T Liu, R Zhang, L Milor
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (11 …, 2018
212018
Investigation on thermo-mechanical responses in high power multi-finger AlGaN/GaN HEMTs
R Zhang, WS Zhao, WY Yin
Microelectronics Reliability 54 (3), 575-581, 2014
192014
Electrothermal characterization of multilevel Cu-graphene heterogeneous interconnects in the presence of an electrostatic discharge (ESD)
R Zhang, WS Zhao, J Hu, WY Yin
IEEE Transactions on Nanotechnology 14 (2), 205-209, 2014
172014
A comparison study of time-dependent dielectric breakdown for analog and digital circuit's optimal accelerated test regions
K Yang, T Liu, R Zhang, L Milor
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS), 1-6, 2017
102017
Modeling of the reliability degradation of a FinFET-based SRAM due to bias temperature instability, hot carrier injection, and gate oxide breakdown
R Zhang, T Liu, K Yang, L Milor
2017 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2017
102017
Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuits
K Yang, T Liu, R Zhang, DH Kim, L Milor
Microelectronics Reliability 76, 81-86, 2017
102017
SRAM stability analysis and performance–reliability tradeoff for different cache configurations
R Zhang, T Liu, K Yang, CC Chen, L Milor
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 28 (3), 620-633, 2020
82020
Modeling of FinFET SRAM array reliability degradation due to electromigration
R Zhang, KX Yang, TZ Liu, L Milor
Microelectronics Reliability 100, 113485, 2019
82019
Circuit-level reliability simulator for front-end-of-line and middle-of-line time-dependent dielectric breakdown in FinFET technology
K Yang, T Liu, R Zhang, L Milor
2018 IEEE 36th VLSI Test Symposium (VTS), 1-6, 2018
82018
Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations
R Zhang, T Liu, K Yang, L Milor
Microelectronics Reliability 76, 87-91, 2017
82017
Recent progress in physics-based modeling of electromigration in integrated circuit interconnects
WS Zhao, R Zhang, DW Wang
Micromachines 13 (6), 883, 2022
72022
Modeling for SRAM reliability degradation due to gate oxide breakdown with a compact current model
R Zhang, T Liu, K Yang, L Milor
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS), 1-5, 2017
72017
A library based on deep neural networks for modeling the degradation of FinFET SRAM performance metrics due to aging
R Zhang, Z Liu, K Yang, T Liu, W Cai, L Milor
Microelectronics Reliability 100, 113486, 2019
62019
Impact of front-end wearout mechanisms on FinFET SRAM soft error rate
R Zhang, Z Liu, K Yang, T Liu, W Cai, L Milor
Microelectronics Reliability 100, 113487, 2019
62019
A lifetime and power sensitive design optimization framework for a radio frequency circuit
K Yang, T Liu, R Zhang, L Milor
2017 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2017
62017
CacheEM: For reliability analysis on Cache memory aging due to electromigration
R Zhang, T Liu, K Yang, L Milor
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2021
52021
Impact of front-end wearout mechanisms on the performance of a ring oscillator-based thermal sensor
R Zhang, K Yang, T Liu, L Milor
2019 IEEE 8th International Workshop on Advances in Sensors and Interfaces …, 2019
52019
Estimation of the optimal accelerated test region for FinFET SRAMs degraded by front-end and back-end wearout mechanisms
R Zhang, K Yang, T Liu, L Milor
2018 Conference on Design of Circuits and Integrated Systems (DCIS), 1-6, 2018
52018
A comprehensive framework for analysis of time-dependent performance-reliability degradation of SRAM cache memory
R Zhang, K Yang, Z Liu, T Liu, W Cai, L Milor
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 29 (5), 857-870, 2021
32021
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