Farzan Jazaeri
Farzan Jazaeri
Research Scientist, EPFL
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα epfl.ch - Αρχική σελίδα
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Παρατίθεται από
Παρατίθεται από
Έτος
FCC-hh: The hadron collider
A Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, JA Fernandez, ...
The European Physical Journal Special Topics 228 (4), 755-1107, 2019
1032019
Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
F Jazaeri, L Barbut, A Koukab, JM Sallese
Solid-State Electronics 82, 103-110, 2013
982013
Modeling and design space of junctionless symmetric DG MOSFETs with long channel
F Jazaeri, L Barbut, JM Sallese
IEEE transactions on electron devices 60 (7), 2120-2127, 2013
432013
Double-gate negative-capacitance MOSFET with PZT gate-stack on ultra thin body SOI: an experimentally calibrated simulation study of device performance
A Saeidi, F Jazaeri, I Stolichnov, AM Ionescu
IEEE Transactions on Electron Devices 63 (12), 4678-4684, 2016
422016
Characterization and modeling of 28-nm bulk CMOS technology down to 4.2 K
A Beckers, F Jazaeri, C Enz
IEEE Journal of the Electron Devices Society 6, 1007-1018, 2018
372018
Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing
A Beckers, F Jazaeri, A Ruffino, C Bruschini, A Baschirotto, C Enz
2017 47th European Solid-State Device Research Conference (ESSDERC), 62-65, 2017
322017
A common core model for junctionless nanowires and symmetric double-gate FETs
JM Sallese, F Jazaeri, L Barbut, N Chevillon, C Lallement
IEEE transactions on electron devices 60 (12), 4277-4280, 2013
322013
Cryogenic MOS transistor model
A Beckers, F Jazaeri, C Enz
IEEE Transactions on Electron Devices 65 (9), 3617-3625, 2018
312018
Transient off-current in junctionless FETs
L Barbut, F Jazaeri, D Bouvet, JM Sallese
IEEE transactions on electron devices 60 (6), 2080-2083, 2013
272013
Negative capacitance as performance booster for tunnel FETs and MOSFETs: an experimental study
A Saeidi, F Jazaeri, F Bellando, I Stolichnov, GV Luong, QT Zhao, S Mantl, ...
IEEE Electron Device Letters 38 (10), 1485-1488, 2017
262017
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
F Jazaeri, JM Sallese
Cambridge University Press, 2018
242018
Trans-capacitance modeling in junctionless symmetric double-gate MOSFETs
F Jazaeri, L Barbut, JM Sallese
IEEE transactions on electron devices 60 (12), 4034-4040, 2013
242013
On performance scaling and speed of junctionless transistors
A Koukab, F Jazaeri, JM Sallese
Solid-state electronics 79, 18-21, 2013
242013
Charge-based modeling of double-gate and nanowire junctionless FETs including interface-trapped charges
A Yesayan, F Jazaeri, JM Sallese
IEEE Transactions on Electron Devices 63 (3), 1368-1374, 2016
222016
Trans-capacitance modeling in junctionless gate-all-around nanowire FETs
F Jazaeri, L Barbut, JM Sallese
Solid-state electronics 96, 34-37, 2014
212014
Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing
A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
202018
Characterization of gigarad total ionizing dose and annealing effects on 28-nm bulk MOSFETs
CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, F Faccio, ...
IEEE Transactions on Nuclear Science 64 (10), 2639-2647, 2017
192017
Generalized charge-based model of double-gate junctionless FETs, including inversion
F Jazaeri, L Barbut, JM Sallese
IEEE Transactions on Electron Devices 61 (10), 3553-3557, 2014
192014
HE-LHC: The High-Energy Large Hadron Collider: Future Circular Collider Conceptual Design Report Volume 4
FCC collaboration
European Physical Journal: Special Topics 228 (5), 1109-1382, 2019
182019
Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC
A Pezzotta, CM Zhang, F Jazaeri, C Bruschini, G Borghello, F Faccio, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 146-149, 2016
182016
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