| Current-induced spin polarization of holes in tellurium VA Shalygin, AN Sofronov, LE Vorob’ev, II Farbshtein Physics of the Solid State 54, 2362-2373, 2012 | 62 | 2012 |
| Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field VA Shalygin, LE Vorobjev, DA Firsov, AN Sofronov, GA Melentyev, ... Journal of Applied Physics 109 (7), 2011 | 45 | 2011 |
| Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ... Journal of applied physics 106 (12), 2009 | 39 | 2009 |
| Terahertz luminescence in strained GaAsN: Be layers under strong electric fields VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ... Applied physics letters 90 (16), 2007 | 30 | 2007 |
| Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm AV Babichev, A Bousseksou, NA Pikhtin, IS Tarasov, EV Nikitina, ... Semiconductors 50, 1299-1303, 2016 | 26 | 2016 |
| Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping DA Firsov, LE Vorobjev, VY Panevin, AN Sofronov, RM Balagula, ... Semiconductors 49, 28-32, 2015 | 25 | 2015 |
| Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping AY Egorov, AV Babichev, LY Karachinsky, II Novikov, EV Nikitina, ... Semiconductors 49, 1527-1530, 2015 | 23 | 2015 |
| The effect of stimulated interband emission on the impurity-assisted far-infrared photoluminescence in GaAs/AlGaAs quantum wells IS Makhov, VY Panevin, AN Sofronov, DA Firsov, LE Vorobjev, ... Superlattices and Microstructures 112, 79-85, 2017 | 22 | 2017 |
| Carrier heating in quantum wells under optical and current injection of electron-hole pairs LE Vorobjev, MY Vinnichenko, DA Firsov, VL Zerova, VY Panevin, ... Semiconductors 44, 1402-1405, 2010 | 18 | 2010 |
| Realization of the Kohn’s theorem in Ge/Si quantum dots with hole gas: Theory and experiment HA Sarkisyan, DB Hayrapetyan, LS Petrosyan, EM Kazaryan, ... Nanomaterials 9 (1), 56, 2019 | 17 | 2019 |
| Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots AN Sofronov, LE Vorobjev, DA Firsov, VY Panevin, RM Balagula, ... Superlattices and microstructures 87, 53-57, 2015 | 17 | 2015 |
| Terahertz electroluminescence of surface plasmons from nanostructured InN layers TV Shubina, AV Andrianov, AO Zakhar’in, VN Jmerik, IP Soshnikov, ... Applied Physics Letters 96 (18), 2010 | 17 | 2010 |
| Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states DA Firsov, VA Shalygin, VY Panevin, GA Melentyev, AN Sofronov, ... Semiconductors 44, 1394-1397, 2010 | 16 | 2010 |
| Lasing in 9.6-μm Quantum Cascade Lasers AV Babichev, GA Gusev, AN Sofronov, DA Firsov, LE Vorob’ev, ... Technical Physics 63, 1511-1515, 2018 | 15 | 2018 |
| Генерация квантово-каскадных лазеров на длине волны излучения 5.8 мкм при комнатной температуре АВ Бабичев, НА Пихтин, ИС Тарасов, ЕВ Никитина, АН Софронов, ... Физика и техника полупроводников 50 (10), 1320-1324, 2016 | 12 | 2016 |
| Lateral photoconductivity in structures with Ge/Si quantum dots VY Panevin, AN Sofronov, LE Vorobjev, DA Firsov, VA Shalygin, ... Semiconductors 47, 1574-1577, 2013 | 12 | 2013 |
| Absorption of far-infrared radiation in Ge/Si quantum dots AN Sofronov, RM Balagula, DA Firsov, LE Vorobjev, AA Tonkikh, ... Semiconductors 52, 59-63, 2018 | 10 | 2018 |
| Growth and optical characterization of 7.5 μm quantum-cascade laser heterostructures grown by MBE AV Babichev, AG Gladyshev, ES Kolodeznyi, AS Kurochkin, ... Journal of Physics: Conference Series 1124 (4), 041029, 2018 | 9 | 2018 |
| Терагерцовое излучение, связанное с примесными переходами электронов в квантовых ямах при оптической и электрической накачке ДА Фирсов, ЛЕ Воробьев, ВЮ Паневин, АН Софронов, РМ Балагула, ... Физика и техника полупроводников 49 (1), 30, 2015 | 9 | 2015 |
| Излучение и фотопроводимость в квантовых ямах GaAs/AlGaAs n-типа в терагерцовой области спектра: роль резонансных состояний ДА Фирсов, ВА Шалыгин, ВЮ Паневин, ГА Мелентьев, АН Софронов, ... Физика и техника полупроводников 44 (11), 1443, 2010 | 9 | 2010 |
Roman M. Balagula (Балагула РМ)Center for Physical Sciences and TechnologyΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα ftmc.lt
