pk hurley
pk hurley
Tyndall National Institute, University College Cork
Verified email at tyndall.ie
Title
Cited by
Cited by
Year
Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy
JY Zhang, IW Boyd, BJ O'sullivan, PK Hurley, PV Kelly, JP Senateur
Journal of Non-Crystalline Solids 303 (1), 134-138, 2002
1702002
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre
Applied physics letters 96 (15), 152908, 2010
1642010
Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes
AG Scheuermann, JP Lawrence, KW Kemp, T Ito, A Walsh, CED Chidsey, ...
Nature materials 15 (1), 99-105, 2016
1602016
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
O EngstrŲm, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
1512007
A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0†…
… O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 024101, 2011
1422011
Temperature and frequency dependent electrical characterization of interfaces using capacitance-voltage and conductance methods
… O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 102902, 2009
1192009
Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
Solid-State Electronics 53 (4), 438-444, 2009
1012009
interface properties following rapid thermal processing
BJ O’sullivan, PK Hurley, C Leveugle, JH Das
Journal of Applied Physics 89 (7), 3811-3820, 2001
882001
Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ...
Journal of Applied Physics 120 (12), 125102, 2016
762016
Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD
Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 428 (1-2), 263-268, 2003
712003
Wide spectral photoresponse of layered platinum diselenide-based photodiodes
C Yim, N McEvoy, S Riazimehr, DS Schneider, F Gity, S Monaghan, ...
Nano letters 18 (3), 1794-1800, 2018
702018
In situ passivation of metal-oxide-semiconductor capacitors with atomic-layer deposited gate dielectric
E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 022902, 2008
692008
Electrical, structural, and chemical properties of films formed by electron beam evaporation
K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...
Journal of Applied Physics 104 (6), 064113, 2008
682008
Structural and electrical analysis of the atomic layer deposition of capacitors with and without an interface control layer
A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 052904, 2010
612010
Interface of ultrathin HfO2 films deposited by UV-photo-CVD
Q Fang, JY Zhang, Z Wang, M Modreanu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 453, 203-207, 2004
612004
Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric
V Djara, K Cherkaoui, M Schmidt, S Monaghan, … O'Connor, IM Povey, ...
IEEE transactions on electron devices 59 (4), 1084, 2012
572012
Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
… O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley
Applied Physics Letters 99 (21), 212901, 2011
552011
Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon
PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ...
Journal of the Electrochemical Society 155 (2), G13, 2007
542007
An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, … O'Connor, ...
Journal of Applied Physics 114 (14), 144105, 2013
512013
Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In0. 53Ga0. 47As
B Brennan, M Milojevic, HC Kim, PK Hurley, J Kim, G Hughes, ...
Electrochemical and Solid State Letters 12 (6), H205, 2009
492009
The system can't perform the operation now. Try again later.
Articles 1–20