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Anumita Sengupta
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Year
Analysis of AlGaN/GaN high electron mobility transistor for high frequency application
S Chatterjee, A Sengupta, S Kundu, A Islam
2017 Devices for Integrated Circuit (DevIC), 196-199, 2017
92017
Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate
A Sengupta, A Islam
Microsystem Technologies 25, 1927-1935, 2019
72019
Analysis of breakdown voltage of a field plated High Electron Mobility Transistor
A Chitransh, S Moonka, A Priya, S Prasad, A Sengupta, A Islam
2017 Devices for Integrated Circuit (DevIC), 167-169, 2017
52017
Normally-Off β-(AlxGa1-x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation
AD Meshram, A Sengupta, TK Bhattacharyya, G Dutta
IEEE Transactions on Electron Devices 70 (2), 454-460, 2023
22023
Dual-gate β-Ga2O3 nanomembrane transistors: device operation and analytical modelling
A Sengupta, TK Bhattacharyya, G Dutta
Journal of Physics D: Applied Physics 54 (40), 405103, 2021
22021
Development of HEMT device with surface passivation for a low leakage current and steep subthreshold slope
A Priya, S Moonka, A Chitransh, S Prasad, A Sengupta, A Islam
2017 Devices for Integrated Circuit (DevIC), 364-367, 2017
22017
Analysis of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs Pseudomorphic HEMT device with higher conductivity
S Moonka, A Priya, A Chitransh, S Prasad, A Sengupta, A Islam
2017 Devices for Integrated Circuit (DevIC), 360-363, 2017
22017
Performance comparison of AlGaN/GaN HFET with sapphire and 4H-SiC substrate
A Sengupta, A Islam
2017 Devices for Integrated Circuit (DevIC), 190-195, 2017
22017
Study of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs PHEMT with delta doping and lower Al mole fraction
K Ankit, R Kumar, O Prakash, A Sengupta, M Guduri, A Islam
2017 International Conference on Multimedia, Signal Processing and …, 2017
12017
Impact of Device Parameters on the Performance of -GaOTEXPRESERVE2 Nanomembrane MESFETs
A Sengupta, AD Meshram, TK Bhattacharyya, G Dutta
IEEE Transactions on Electron Devices, 2024
2024
ON- and OFF-State Performance of Normally-OFF β-(AlxGa1-x)2O3/Ga2O3 MODFETs with p-GaN Gate
AD Meshram, A Sengupta, TK Bhattacharyya, G Dutta
2023 IEEE 20th India Council International Conference (INDICON), 673-678, 2023
2023
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