Room‐temperature synthesis of 2D Janus crystals and their heterostructures DB Trivedi, G Turgut, Y Qin, MY Sayyad, D Hajra, M Howell, L Liu, S Yang, ... Advanced materials 32 (50), 2006320, 2020 | 169 | 2020 |
High breakdown electric field in â-Ga2O3/graphene vertical barristor heterostructure X Yan, IS Esqueda, J Ma, J Tice, H Wang Applied Physics Letters 112 (3), 2018 | 147 | 2018 |
Aligned carbon nanotube synaptic transistors for large-scale neuromorphic computing I Sanchez Esqueda, X Yan, C Rutherglen, A Kane, T Cain, P Marsh, Q Liu, ... ACS nano 12 (7), 7352-7361, 2018 | 143 | 2018 |
Compact modeling of total ionizing dose and aging effects in MOS technologies IS Esqueda, HJ Barnaby, MP King IEEE Transactions on Nuclear Science 62 (4), 1501-1515, 2015 | 135 | 2015 |
Modeling ionizing radiation effects in solid state materials and CMOS devices HJ Barnaby, ML McLain, IS Esqueda, XJ Chen IEEE Transactions on Circuits and Systems I: Regular Papers 56 (8), 1870-1883, 2009 | 131 | 2009 |
Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies IS Esqueda, HJ Barnaby, ML Alles IEEE transactions on nuclear science 52 (6), 2259-2264, 2005 | 119 | 2005 |
Cross-layer modeling and simulation of circuit reliability Y Cao, J Velamala, K Sutaria, MSW Chen, J Ahlbin, IS Esqueda, M Bajura, ... IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2013 | 81 | 2013 |
Total-ionizing-dose effects on isolation oxides in modern CMOS technologies HJ Barnaby, M Mclain, IS Esqueda Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007 | 66 | 2007 |
Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices FE Mamouni, SK Dixit, RD Schrimpf, PC Adell, IS Esqueda, ML McLain, ... IEEE Transactions on Nuclear Science 55 (6), 3259-3264, 2008 | 52 | 2008 |
Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors IS Esqueda, HJ Barnaby, KE Holbert, F El-Mamouni, RD Schrimpf IEEE Transactions on Nuclear Science 58 (2), 499-505, 2011 | 48 | 2011 |
Total ionizing dose induced charge carrier scattering in graphene devices CD Cress, JG Champlain, IS Esqueda, JT Robinson, AL Friedman, ... IEEE Transactions on Nuclear Science 59 (6), 3045-3053, 2012 | 47 | 2012 |
Modeling inter-device leakage in 90 nm bulk CMOS devices IS Esqueda, HJ Barnaby, KE Holbert, Y Boulghassoul IEEE Transactions on Nuclear Science 58 (3), 793-799, 2011 | 45 | 2011 |
Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity IS Esqueda, HJ Barnaby, PC Adell IEEE Transactions on Nuclear Science 59 (4), 701-706, 2012 | 43 | 2012 |
Modeling the radiation response of fully-depleted SOI n-channel MOSFETs IS Esqueda, HJ Barnaby, ML McLain, PC Adell, FE Mamouni, SK Dixit, ... IEEE Transactions on Nuclear Science 56 (4), 2247-2250, 2009 | 39 | 2009 |
Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors ML McLain, HJ Barnaby, IS Esqueda, J Oder, B Vermeire 2009 IEEE International Reliability Physics Symposium, 174-179, 2009 | 34 | 2009 |
Modeling low dose rate effects in shallow trench isolation oxides IS Esqueda, HJ Barnaby, PC Adell, BG Rax, HP Hjalmarson, ML McLain, ... IEEE Transactions on Nuclear Science 58 (6), 2945-2952, 2011 | 32 | 2011 |
Modeling the non-uniform distribution of radiation-induced interface traps IS Esqueda, HJ Barnaby IEEE Transactions on Nuclear Science 59 (4), 723-727, 2012 | 30 | 2012 |
A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits IS Esqueda, HJ Barnaby Solid-State Electronics 91, 81-86, 2014 | 28 | 2014 |
The viability of analog-based accelerators for neuromorphic computing: A survey M Musisi-Nkambwe, S Afshari, H Barnaby, M Kozicki, IS Esqueda Neuromorphic Computing and Engineering 1 (1), 012001, 2021 | 26 | 2021 |
Modeling of total ionizing dose effects in advanced complementary metal-oxide-semiconductor technologies IS Esqueda Arizona State University, 2011 | 25 | 2011 |