| Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots N Perret, D Morris, L Franchomme-Fossé, R Côté, S Fafard, V Aimez, ... Physical Review B 62 (8), 5092, 2000 | 116 | 2000 |
| Low-energy ion-implantation-induced quantum-well intermixing V Aimez, J Beauvais, J Beerens, D Morris, HS Lim, BS Ooi IEEE Journal of selected topics in quantum electronics 8 (4), 870-879, 2002 | 102 | 2002 |
| A nanodamascene process for advanced single-electron transistor fabrication C Dubuc, J Beauvais, D Drouin IEEE transactions on nanotechnology 7 (1), 68-73, 2008 | 85 | 2008 |
| Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps J Beauvais, JH Marsh, AH Kean, AC Bryce, C Button Electronics letters 28 (17), 1670-1672, 1992 | 76 | 1992 |
| pH driven addressing of silicon nanowires onto Si3N4/SiO2 micro-patterned surfaces JP Cloarec, C Chevalier, J Genest, J Beauvais, H Chamas, Y Chevolot, ... Nanotechnology 27 (29), 295602, 2016 | 63 | 2016 |
| Real-time detection of influenza A virus using semiconductor nanophotonics D Lepage, A Jiménez, J Beauvais, JJ Dubowski Light: Science & Applications 2 (4), e62-e62, 2013 | 63 | 2013 |
| Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates B Salem, D Morris, V Aimez, J Beerens, J Beauvais, D Houde Journal of Physics: Condensed Matter 17 (46), 7327, 2005 | 62 | 2005 |
| Uniform one-dimensional arrays of tunable gold nanoparticles with tunable interparticle distances MK Corbierre, J Beerens, J Beauvais, RB Lennox Chemistry of materials 18 (11), 2628-2631, 2006 | 57 | 2006 |
| Conic hyperspectral dispersion mapping applied to semiconductor plasmonics D Lepage, A Jiménez, J Beauvais, JJ Dubowski Light: Science & Applications 1 (9), e28-e28, 2012 | 54 | 2012 |
| Carbon nanotubes based sensing elements and system for monitoring and mapping force, strain and stress J Beauvais, P Boissy, J Genest, A Sauve US Patent 8,943,897, 2015 | 47 | 2015 |
| Room Temperature Single-Electron Transistor Featuring Gate-Enhanced on -State Current A Beaumont, C Dubuc, J Beauvais, D Drouin IEEE electron device letters 30 (7), 766-768, 2009 | 47 | 2009 |
| Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials B Salem, D Morris, V Aimez, J Beauvais, D Houde Semiconductor science and technology 21 (3), 283, 2006 | 40 | 2006 |
| Blueshifting of InGaAsP/InP laser diodes by low-energy ion implantation M Paquette, J Beauvais, J Beerens, PJ Poole, S Charbonneau, CJ Miner, ... Applied physics letters 71 (26), 3749-3751, 1997 | 38 | 1997 |
| Simulation and design methodology for hybrid SET-CMOS integrated logic at 22-nm room-temperature operation R Parekh, A Beaumont, J Beauvais, D Drouin IEEE transactions on electron devices 59 (4), 918-923, 2012 | 36 | 2012 |
| Framework for the analysis of nanotechnologies’ impacts and ethical acceptability: basis of an interdisciplinary approach to assessing novel technologies J Patenaude, GA Legault, J Beauvais, L Bernier, JP Béland, P Boissy, ... Science and Engineering Ethics 21, 293-315, 2015 | 34 | 2015 |
| Self‐developing holographic recording in Li‐implanted Te thin films J Beauvais, RA Lessard, P Galarneau, EJ Knystautas Applied physics letters 57 (13), 1354-1356, 1990 | 34 | 1990 |
| Spectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidation G Droulers, A Beaumont, J Beauvais, D Drouin Journal of Vacuum Science & Technology B 29 (2), 2011 | 33 | 2011 |
| Method for fabricating submicron silicide structures on silicon using a resistless electron beam lithography process D Drouin, J Beauvais, R Lemire, E Lavallée, R Gauvin, M Caron Applied physics letters 70 (22), 3020-3022, 1997 | 33 | 1997 |
| The enhancement of quantum well intermixing through repeated ion implantation PJ Poole, PG Piva, M Buchanan, GC Aers, AP Roth, M Dion, ... Semiconductor science and technology 9 (11), 2134, 1994 | 33 | 1994 |
| Single-electron transistors with wide operating temperature range C Dubuc, J Beauvais, D Drouin Applied physics letters 90 (11), 2007 | 32 | 2007 |
