Neophytos Lophitis
Neophytos Lophitis
Assistant Professor in Electrical Power Electronics at University of Nottingham
Verified email at Nottingham.ac.uk - Homepage
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Year
The destruction mechanism in GCTs
N Lophitis, M Antoniou, F Udrea, FD Bauer, I Nistor, M Arnold, T Wikstrom, ...
IEEE transactions on electron devices 60 (2), 819-826, 2013
192013
Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation
A Arvanitopoulos, N Lophitis, KN Gyftakis, S Perkins, M Antoniou
Semiconductor Science and Technology 32 (10), 104009, 2017
172017
Novel approach towards plasma enhancement in Trench Insulated Gate Bipolar Transistors
M Antoniou, N Lophitis, I Lestas, F Udrea, F Bauer, M Bellini, I Nistor, ...
IEEE Electron Device Letters 36 (8), 823 - 825, 2015
172015
A new approach for broken rotor bar detection in induction motors using frequency extraction in stray flux signals
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis
IEEE Transactions on Industry Applications 55 (4), 3501-3511, 2019
142019
Analysis of stray flux spectral components in induction machines under rotor bar breakages at various locations
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis
2018 XIII International Conference on Electrical Machines (ICEM), 2345-2351, 2018
142018
On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept
M Antoniou, N Lophitis, F Udrea, F Bauer, UR Vemulapati, U Badstuebner
IEEE Electron Device Letters, 2017
142017
Experimentally validated three dimensional GCT wafer level simulations
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikström, J Vobecky
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
142012
Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses
M Antoniou, N Lophitis, F Udrea, F Bauer, I Nistor, M Bellini, M Rahimo
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
132015
TCAD device modelling and simulation of wide bandgap power semiconductors
N Lophitis, A Arvanitopoulos, S Perkins, M Antoniou, YK Sharma
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their …, 2018
122018
Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC
A Arvanitopoulos, N Lophitis, S Perkins, KN Gyftakis, MB Guadas, ...
2017 IEEE 11th International Symposium on Diagnostics for Electrical …, 2017
112017
An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor”(BGCT)
U Vemulapati, M Arnold, M Rahimo, J Vobecky, T Stiasny, N Lophitis, ...
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
112015
Parameters influencing the maximum controllable current in gate commutated thyristors
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikstrom, J Vobecky
IET Circuits, Devices & Systems 8 (3), 221-226, 2014
92014
Parameters influencing the maximum controllable current in gate commutated thyristors
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikstrom, J Vobecky
IET Circuits, Devices & Systems 8 (3), 221-226, 2014
92014
Gate commutated thyristor with voltage independent maximum controllable current
N Lophitis, M Antoniou, F Udrea, I Nistor, MT Rahimo, M Arnold, ...
IEEE electron device letters 34 (8), 954-956, 2013
72013
High voltage semiconductor device with reduced peak electric field in active and termination areas of the device
P Ward, N Lophitis, T Trajkovic, F Udrea
US Patent 10,157,979, 2018
52018
> 10kV 4H-SiC n-IGBTs for Elevated Temperature Environments
S Perkins, M Antoniou, AK Tiwari, A Arvanitopoulos, T Trajkovic, F Udrea, ...
The 14th International Seminar on Power Semiconductors (ISPS 2018), 2018
52018
A comprehensive comparison of the static performance of commercial GaN-on-Si devices
S Perkins, A Arvanitopoulos, KN Gyftakis, N Lophitis
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
52017
Improving Current Controllability in Bi-mode Gate Commutated Thyristors
N Lophitis, M Antoniou, F Udrea, U Vemulapati, M Arnold, I Nistor, ...
IEEE Transactions on Electron Devices 62 (7), 2263 - 2269, 2015
52015
Turn-off failure mechanism in large area IGCTs
N Lophitis, M Antoniou, F Udrea, T Wikström, I Nistor
CAS 2011 Proceedings (2011 International Semiconductor Conference) 2, 361-364, 2011
52011
A Content and Language Integrated Learning (CLIL) Project: Opportunities and challenges in the context of heritage language education
M Charalampidi, M Hammond, N Hadjipavlou, N Lophitis
The European Conference on Language Learning 2017 Official Conference …, 2017
42017
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