Neophytos Lophitis
Neophytos Lophitis
Assistant Professor in Electrical Power Electronics at University of Nottingham
Verified email at Nottingham.ac.uk - Homepage
Title
Cited by
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Year
The destruction mechanism in GCTs
N Lophitis, M Antoniou, F Udrea, FD Bauer, I Nistor, M Arnold, T Wikstrom, ...
IEEE transactions on electron devices 60 (2), 819-826, 2013
202013
Novel approach towards plasma enhancement in Trench Insulated Gate Bipolar Transistors
M Antoniou, N Lophitis, I Lestas, F Udrea, F Bauer, M Bellini, I Nistor, ...
IEEE Electron Device Letters 36 (8), 823 - 825, 2015
192015
A new approach for broken rotor bar detection in induction motors using frequency extraction in stray flux signals
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis
IEEE Transactions on Industry Applications 55 (4), 3501-3511, 2019
182019
On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept
M Antoniou, N Lophitis, F Udrea, F Bauer, UR Vemulapati, U Badstuebner
IEEE Electron Device Letters, 2017
182017
Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation
A Arvanitopoulos, N Lophitis, KN Gyftakis, S Perkins, M Antoniou
Semiconductor Science and Technology 32 (10), 104009, 2017
172017
Experimentally validated three dimensional GCT wafer level simulations
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikström, J Vobecky
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
152012
Analysis of stray flux spectral components in induction machines under rotor bar breakages at various locations
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis
2018 XIII International Conference on Electrical Machines (ICEM), 2345-2351, 2018
142018
Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses
M Antoniou, N Lophitis, F Udrea, F Bauer, I Nistor, M Bellini, M Rahimo
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
142015
Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC
A Arvanitopoulos, N Lophitis, S Perkins, KN Gyftakis, MB Guadas, ...
2017 IEEE 11th International Symposium on Diagnostics for Electrical …, 2017
132017
TCAD device modelling and simulation of wide bandgap power semiconductors
N Lophitis, A Arvanitopoulos, S Perkins, M Antoniou, YK Sharma
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their …, 2018
122018
An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor”(BGCT)
U Vemulapati, M Arnold, M Rahimo, J Vobecky, T Stiasny, N Lophitis, ...
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
112015
Parameters influencing the maximum controllable current in gate commutated thyristors
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikstrom, J Vobecky
IET Circuits, Devices & Systems 8 (3), 221-226, 2014
102014
Parameters influencing the maximum controllable current in gate commutated thyristors
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikstrom, J Vobecky
IET Circuits, Devices & Systems 8 (3), 221-226, 2014
102014
Gate commutated thyristor with voltage independent maximum controllable current
N Lophitis, M Antoniou, F Udrea, I Nistor, MT Rahimo, M Arnold, ...
IEEE electron device letters 34 (8), 954-956, 2013
82013
High voltage semiconductor device with reduced peak electric field in active and termination areas of the device
P Ward, N Lophitis, T Trajkovic, F Udrea
US Patent 10,157,979, 2018
52018
> 10kV 4H-SiC n-IGBTs for Elevated Temperature Environments
S Perkins, M Antoniou, AK Tiwari, A Arvanitopoulos, T Trajkovic, F Udrea, ...
The 14th International Seminar on Power Semiconductors (ISPS 2018), 2018
52018
A comprehensive comparison of the static performance of commercial GaN-on-Si devices
S Perkins, A Arvanitopoulos, KN Gyftakis, N Lophitis
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
52017
Improving Current Controllability in Bi-mode Gate Commutated Thyristors
N Lophitis, M Antoniou, F Udrea, U Vemulapati, M Arnold, I Nistor, ...
IEEE Transactions on Electron Devices 62 (7), 2263 - 2269, 2015
52015
Turn-off failure mechanism in large area IGCTs
N Lophitis, M Antoniou, F Udrea, T Wikström, I Nistor
CAS 2011 Proceedings (2011 International Semiconductor Conference) 2, 361-364, 2011
52011
On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes
AE Arvanitopoulos, M Antoniou, S Perkins, M Jennings, MB Guadas, ...
IEEE Transactions on Industry Applications 55 (4), 4080-4090, 2019
42019
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