Neophytos Lophitis
Neophytos Lophitis
Assistant Professor at University of Nottingham
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα Nottingham.ac.uk - Αρχική σελίδα
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Παρατίθεται από
Παρατίθεται από
Έτος
A new approach for broken rotor bar detection in induction motors using frequency extraction in stray flux signals
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis
IEEE Transactions on Industry Applications 55 (4), 3501-3511, 2019
312019
The destruction mechanism in GCTs
N Lophitis, M Antoniou, F Udrea, FD Bauer, I Nistor, M Arnold, T Wikstrom, ...
IEEE transactions on electron devices 60 (2), 819-826, 2013
232013
On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept
M Antoniou, N Lophitis, F Udrea, F Bauer, UR Vemulapati, U Badstuebner
IEEE Electron Device Letters, 2017
222017
Novel approach towards plasma enhancement in Trench Insulated Gate Bipolar Transistors
M Antoniou, N Lophitis, I Lestas, F Udrea, F Bauer, M Bellini, I Nistor, ...
IEEE Electron Device Letters 36 (8), 823 - 825, 2015
222015
Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation
A Arvanitopoulos, N Lophitis, KN Gyftakis, S Perkins, M Antoniou
Semiconductor Science and Technology 32 (10), 104009, 2017
202017
Analysis of stray flux spectral components in induction machines under rotor bar breakages at various locations
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis
2018 XIII International Conference on Electrical Machines (ICEM), 2345-2351, 2018
182018
TCAD device modelling and simulation of wide bandgap power semiconductors
N Lophitis, A Arvanitopoulos, S Perkins, M Antoniou, YK Sharma
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their …, 2018
182018
Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses
M Antoniou, N Lophitis, F Udrea, F Bauer, I Nistor, M Bellini, M Rahimo
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
162015
Experimentally validated three dimensional GCT wafer level simulations
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikström, J Vobecky
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
152012
Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC
A Arvanitopoulos, N Lophitis, S Perkins, KN Gyftakis, MB Guadas, ...
2017 IEEE 11th International Symposium on Diagnostics for Electrical …, 2017
142017
Parameters influencing the maximum controllable current in gate commutated thyristors
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikstrom, J Vobecky
IET Circuits, Devices & Systems 8 (3), 221-226, 2014
122014
Parameters influencing the maximum controllable current in gate commutated thyristors
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikstrom, J Vobecky
IET Circuits, Devices & Systems 8 (3), 221-226, 2014
122014
An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor”(BGCT)
U Vemulapati, M Arnold, M Rahimo, J Vobecky, T Stiasny, N Lophitis, ...
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
112015
A Content and Language Integrated Learning (CLIL) Project: Opportunities and challenges in the context of heritage language education
M Charalampidi, M Hammond, N Hadjipavlou, N Lophitis
The European Conference on Language Learning 2017: Educating for Change, 2017
102017
Gate commutated thyristor with voltage independent maximum controllable current
N Lophitis, M Antoniou, F Udrea, I Nistor, MT Rahimo, M Arnold, ...
IEEE electron device letters 34 (8), 954-956, 2013
102013
On the broken rotor bar diagnosis using time–frequency analysis:‘Is one spectral representation enough for the characterisation of monitored signals?’
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis
IET Electric Power Applications 13 (7), 932-942, 2019
92019
On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes
AE Arvanitopoulos, M Antoniou, S Perkins, M Jennings, MB Guadas, ...
IEEE Transactions on Industry Applications 55 (4), 4080-4090, 2019
72019
Development and verification of a distributed electro-thermal Li-ion cell model
R Stocker, N Lophitis, A Mumtaz
IECON 2018-44th Annual Conference of the IEEE Industrial Electronics Society …, 2018
72018
FEM approach for diagnosis of induction machines' non-adjacent broken rotor bars by short-time Fourier transform spectrogram
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis
The Journal of Engineering 2019 (17), 4566-4570, 2019
62019
High voltage semiconductor device with reduced peak electric field in active and termination areas of the device
P Ward, N Lophitis, T Trajkovic, F Udrea
US Patent 10,157,979, 2018
62018
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