| Realizing large-scale, electronic-grade two-dimensional semiconductors YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ... ACS nano 12 (2), 965-975, 2018 | 213 | 2018 |
| Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides K Zhang, B Jariwala, J Li, NC Briggs, B Wang, D Ruzmetov, RA Burke, ... Nanoscale 10 (1), 336-341, 2018 | 48 | 2018 |
| Properties of synthetic epitaxial graphene/molybdenum disulfide lateral heterostructures S Subramanian, DD Deng, K Xu, N Simonson, K Wang, K Zhang, J Li, ... Carbon 125, 551-556, 2017 | 40 | 2017 |
| Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures YC Lin, J Li, SC de La Barrera, SM Eichfeld, Y Nie, R Addou, PC Mende, ... Nanoscale 8 (16), 8947-8954, 2016 | 29 | 2016 |
| Formation of hexagonal boron nitride on graphene-covered copper surfaces DP Gopalan, PC Mende, SC de la Barrera, S Dhingra, J Li, K Zhang, ... Journal of Materials Research 31 (7), 945-958, 2016 | 24 | 2016 |
| ACS Nano 9, 2080 (2015) SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ... Article, 0 | 15 | |
| Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene PC Mende, J Li, RM Feenstra Applied Physics Letters 113 (3), 2018 | 11 | 2018 |
| ACS Nano 12, 965 (2018) YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ... | 11 | |
| Characteristics of Interlayer Tunneling Field-Effect Transistors Computed by a “DFT-Bardeen” Method J Li, Y Nie, K Cho, RM Feenstra Journal of Electronic Materials 46, 1378-1389, 2017 | 9 | 2017 |
| Magnitude of the current in 2D interlayer tunneling devices RM Feenstra, SC De la Barrera, J Li, Y Nie, K Cho Journal of Physics: Condensed Matter 30 (5), 055703, 2018 | 7 | 2018 |
| Formation of graphene atop a Si adlayer on the C-face of SiC RMF Jun Li, Qingxiao Wang, Guowei He, Michael Widom, Lydia Nemec, Volker ... Phys. Rev. Materials 3, 084006, 2019 | 3 | 2019 |
