| High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings H Fu, K Fu, SR Alugubelli, CY Cheng, X Huang, H Chen, TH Yang, ... IEEE Electron Device Letters 41 (1), 127-130, 2019 | 62 | 2019 |
| Demonstration of mechanically exfoliated β-Ga2O3/GaN pn heterojunction J Montes, C Yang, H Fu, TH Yang, K Fu, H Chen, J Zhou, X Huang, ... Applied Physics Letters 114 (16), 2019 | 59 | 2019 |
| Demonstration of 1.27 kV Etch-Then-Regrow GaN - Junctions With Low Leakage for GaN Power Electronics K Fu, H Fu, X Huang, H Chen, TH Yang, J Montes, C Yang, J Zhou, ... IEEE Electron Device Letters 40 (11), 1728-1731, 2019 | 58 | 2019 |
| Reverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes K Fu, H Fu, X Huang, TH Yang, CY Cheng, PR Peri, H Chen, J Montes, ... IEEE Journal of the Electron Devices Society 8, 74-83, 2020 | 56 | 2020 |
| Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing H Fu, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, J Montes, TH Yang, ... Applied Physics Express 12 (5), 051015, 2019 | 37 | 2019 |
| GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD C Yang, H Fu, VN Kumar, K Fu, H Liu, X Huang, TH Yang, H Chen, J Zhou, ... IEEE Transactions on Electron Devices 67 (10), 3972-3977, 2020 | 28 | 2020 |
| Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability K Fu, H Fu, X Huang, TH Yang, H Chen, I Baranowski, J Montes, C Yang, ... IEEE Electron Device Letters 40 (3), 375-378, 2019 | 26 | 2019 |
| Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ... Materials Today 49, 296-323, 2021 | 25 | 2021 |
| Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing C Yang, H Fu, P Peri, K Fu, TH Yang, J Zhou, J Montes, DJ Smith, Y Zhao IEEE Electron Device Letters 42 (8), 1128-1131, 2021 | 24 | 2021 |
| Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping K Song, H Zhang, H Fu, C Yang, R Singh, Y Zhao, H Sun, S Long Journal of Physics D: Applied Physics 53 (34), 345107, 2020 | 24 | 2020 |
| The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices K Fu, H Fu, X Deng, PY Su, H Liu, K Hatch, CY Cheng, D Messina, ... Applied Physics Letters 118 (22), 2021 | 19 | 2021 |
| Supercontinuum generation in high order waveguide mode with near-visible pumping using aluminum nitride waveguides H Chen, J Zhou, D Li, D Chen, AK Vinod, H Fu, X Huang, TH Yang, ... ACS Photonics 8 (5), 1344-1352, 2021 | 19 | 2021 |
| AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric TH Yang, J Brown, K Fu, J Zhou, K Hatch, C Yang, J Montes, X Qi, H Fu, ... Applied Physics Letters 118 (7), 2021 | 17 | 2021 |
| Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films PY Su, H Liu, C Yang, K Fu, H Fu, Y Zhao, FA Ponce Applied Physics Letters 117 (10), 2020 | 17 | 2020 |
| Vertical GaN-on-GaN Schottky barrier diodes with multi-floating metal rings TH Yang, H Fu, K Fu, C Yang, J Montes, X Huang, H Chen, J Zhou, X Qi, ... IEEE Journal of the Electron Devices Society 8, 857-863, 2020 | 16 | 2020 |
| Demonstration of low loss β-Ga2O3 optical waveguides in the UV–NIR spectra J Zhou, H Chen, H Fu, K Fu, X Deng, X Huang, TH Yang, JA Montes, ... Applied Physics Letters 115 (25), 2019 | 16 | 2019 |
| Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3 J Montes, C Kopas, H Chen, X Huang, T Yang, K Fu, C Yang, J Zhou, X Qi, ... Journal of Applied Physics 128 (20), 2020 | 15 | 2020 |
| Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device X Huang, R Fang, C Yang, K Fu, H Fu, H Chen, TH Yang, J Zhou, ... Nanotechnology 30 (21), 215201, 2019 | 12 | 2019 |
| GaN-on-GaN pin diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment K Fu, Z He, C Yang, J Zhou, H Fu, Y Zhao Applied Physics Letters 121 (9), 2022 | 11 | 2022 |
| Assess low-k/ultralow-k materials integrity by shear test on bumps of a chip C Yang, L Wang, K Yu, J Wang, F Xiao, W Zhang Journal of Materials Science: Materials in Electronics 29, 16416-16425, 2018 | 11 | 2018 |
