| Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ... Applied Physics Letters 115 (25), 2019 | 129 | 2019 |
| Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3 Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020 | 102 | 2020 |
| High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ... Journal of Applied Physics 127 (21), 2020 | 85 | 2020 |
| β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ... IEEE Electron Device Letters 42 (6), 899-902, 2021 | 79 | 2021 |
| Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ... Applied Physics Letters 115 (15), 2019 | 58 | 2019 |
| Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ... IEEE Transactions on Electron Devices 68 (1), 29-35, 2020 | 57 | 2020 |
| High-permittivity dielectric edge termination for vertical high voltage devices HS Lee, NK Kalarickal, MW Rahman, Z Xia, W Moore, C Wang, S Rajan Journal of Computational Electronics 19, 1538-1545, 2020 | 14 | 2020 |
| Characterization of flexible pH micro-sensors based on electrodeposited IrOx thin film P Marsh, W Moore, M Clucas, L Huynh, KT Kim, S Yi, H Cao, JC Chiao 2017 IEEE SENSORS, 1-3, 2017 | 12 | 2017 |
| Metal/BaTiO Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone Appl. Phys. Lett 115 (25), 2019 | 10 | 2019 |
| High electron density NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart J. Appl. Phys 127 (21), 2020 | 6 | 2020 |
| Aktuelle Technik und Anwendung der perkutanen Kryotherapie A Mahnken, A König, J Figiel RöFo-Fortschritte auf dem Gebiet der Röntgenstrahlen und der bildgebenden …, 2018 | 1 | 2018 |
| Dielectric heterojunction device S Rajan, Z Xia, W Moore US Patent 11,476,340, 2022 | | 2022 |
| Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors N Kurian Kalarickal, Z Feng, AFM Anhar Uddin Bhuiyan, Z Xia, ... arXiv e-prints, arXiv: 2006.02349, 2020 | | 2020 |
| High electron density modulation doping using ultra-thin (1 nm) spacer layer N Kurian Kalarickal, Z Xia, J Mcglone, Y Liu, W Moore, A Arehart, S Ringel, ... arXiv e-prints, arXiv: 1910.11521, 2019 | | 2019 |
| Mechanism of Si doping in Plasma Assisted MBE Growth of\b {eta}-Ga2O3 N Kurian Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, ... arXiv e-prints, arXiv: 1908.01101, 2019 | | 2019 |
| PLEASE CITE THIS ARTICLE AS DOI: 10.1063/1.5123149 NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ... | | |
| High electron density 𝜷-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, J Mcglone, Y Liu, W Moore, AR Arehart, SA Ringel, ... | | |
| High electron density 𝜷𝜷-(Al0. 18Ga0. 82) 2O3/Ga2O3 modulation doping using ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, J Mcglone, Y Liu, W Moore, A Arehart, S Ringel, ... | | |
