500 Bipolar Integrated OR/NOR Gate in 4H-SiC L Lanni, BG Malm, M Östling, CM Zetterling
IEEE Electron Device Letters 34 (9), 1091-1093, 2013
109 2013 A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling
IEEE Electron Device Letters 35 (7), 693-695, 2014
86 2014 Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012
68 2012 500° C bipolar SiC linear voltage regulator S Kargarrazi, L Lanni, S Saggini, A Rusu, CM Zetterling
IEEE Transactions on Electron Devices 62 (6), 1953-1957, 2015
41 2015 Bipolar integrated circuits in SiC for extreme environment operation CM Zetterling, A Hallén, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ...
Semiconductor Science and Technology 32 (3), 034002, 2017
40 2017 A monolithic SiC drive circuit for SiC Power BJTs S Kargarrazi, L Lanni, A Rusu, CM Zetterling
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
37 2015 Wide temperature range integrated bandgap voltage references in 4H–SiC R Hedayati, L Lanni, A Rusu, CM Zetterling
IEEE Electron Device Letters 37 (2), 146-149, 2015
31 2015 Influence of passivation oxide thickness and device layout on the current gain of SiC BJTs L Lanni, BG Malm, M Östling, CM Zetterling
IEEE Electron Device Letters 36 (1), 11-13, 2014
29 2014 A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier S Kargarrazi, L Lanni, CM Zetterling
Solid-State Electronics 116, 33-37, 2016
25 2016 SiC etching and sacrificial oxidation effects on the performance of 4H-SiC BJTs L Lanni, BG Malm, M Östling, CM Zetterling
Materials Science Forum 778, 1005-1008, 2014
25 2014 Silicon carbide fully differential amplifier characterized up to 500° C Y Tian, L Lanni, A Rusu, CM Zetterling
IEEE Transactions on Electron Devices 63 (6), 2242-2247, 2016
24 2016 Design and characterization of 500° C Schmitt trigger in 4H-SiC S Kargarrazi, L Lanni, CM Zetterling
Materials Science Forum 821, 897-901, 2015
22 2015 Lateral pnp transistors and complementary SiC bipolar technology L Lanni, BG Malm, M Östling, CM Zetterling
IEEE electron device letters 35 (4), 428-430, 2014
21 2014 High gamma ray tolerance for 4H-SiC bipolar circuits SS Suvanam, SI Kuroki, L Lanni, R Hadayati, T Ohshima, T Makino, ...
IEEE Transactions on Nuclear Science 64 (2), 852-858, 2016
20 2016 ECL-based SiC logic circuits for extreme temperatures L Lanni, BG Malm, M Östling, CM Zetterling
Materials Science Forum 821, 910-913, 2015
20 2015 Future high temperature applications for SiC integrated circuits CM Zetterling, L Lanni, R Ghandi, BG Malm, M Östling
physica status solidi c 9 (7), 1647-1650, 2012
20 2012 A 500° C 8-b digital-to-analog converter in silicon carbide bipolar technology R Hedayati, L Lanni, BG Malm, A Rusu, CM Zetterling
IEEE Transactions on Electron Devices 63 (9), 3445-3450, 2016
19 2016 Silicon carbide bipolartechnology for high temperature integrated circuits L Lanni
KTH Royal Institute of Technology, 2014
18 2014 A 4H-SiC bipolar technology for high-temperature integrated circuits L Lanni, BG Malm, CM Zetterling, M Östling
Journal of microelectronics and electronic packaging 10 (4), 155-162, 2013
16 2013 Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from-40 C to 500 C K Smedfors, L Lanni, M Östling, CM Zetterling
Materials Science Forum 778, 681-684, 2014
14 2014