Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films A Ranjan, N Raghavan, SJ O’shea, S Mei, M Bosman, K Shubhakar, ...
Scientific reports 8 (1), 2854, 2018
63 2018 Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ...
Microelectronic engineering 109, 364-369, 2013
53 2013 High-κ dielectric breakdown in nanoscale logic devices–Scientific insight and technology impact N Raghavan, KL Pey, K Shubhakar
Microelectronics Reliability 54 (5), 847-860, 2014
48 2014 Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy K Shubhakar, KL Pey, SS Kushvaha, SJ O’Shea, N Raghavan, M Bosman, ...
Applied Physics Letters 98 (7), 2011
39 2011 Modified Percolation Model for Polycrystalline High- N Raghavan, KL Pey, K Shubhakar, M Bosman
IEEE electron device letters 32 (1), 78-80, 2010
35 2010 Random telegraph noise in 2D hexagonal boron nitride dielectric films A Ranjan, FM Puglisi, N Raghavan, SJ O'Shea, K Shubhakar, P Pavan, ...
Applied Physics Letters 112 (13), 2018
30 2018 Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM A Ranjan, N Raghavan, J Molina, SJ O'Shea, K Shubhakar, KL Pey
Microelectronics Reliability 64, 172-178, 2016
25 2016 Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks N Raghavan, KL Pey, K Shubhakar, X Wu, WH Liu, M Bosman
2012 IEEE International Reliability Physics Symposium (IRPS), 6A. 1.1-6A. 1.11, 2012
25 2012 Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement KL Pey, N Raghavan, X Wu, W Liu, X Li, M Bosman, K Shubhakar, ...
Microelectronic engineering 88 (7), 1365-1372, 2011
22 2011 Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy R Thamankar, N Raghavan, J Molina, FM Puglisi, SJ O'Shea, ...
Journal of Applied Physics 119 (8), 2016
21 2016 CAFM based spectroscopy of stress-induced defects in HfO2 with experimental evidence of the clustering model and metastable vacancy defect state A Ranjan, N Raghavan, K Shubhakar, R Thamankar, J Molina, SJ O'Shea, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 7A-4-1-7A-4-7, 2016
19 2016 New insight into the TDDB and breakdown reliability of novel high-к gate dielectric stacks KL Pey, N Raghavan, X Li, WH Liu, K Shubhakar, X Wu, M Bosman
2010 IEEE International Reliability Physics Symposium, 354-363, 2010
19 2010 Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectrics A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ...
IEEE Electron Device Letters 40 (8), 1321-1324, 2019
18 2019 The “buffering” role of high-к in post breakdown degradation immunity of advanced dual layer dielectric gate stacks N Raghavan, A Padovani, X Wu, K Shubhakar, M Bosman, L Larcher, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5A. 3.1-5A. 3.8, 2013
17 2013 Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks: Computational and physical insight K Shubhakar, S Mei, M Bosman, N Raghavan, A Ranjan, SJ O'Shea, ...
Microelectronics Reliability 64, 204-209, 2016
13 2016 Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 4A. 1-1-4A. 1-6, 2018
12 2018 Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations R Thamankar, FM Puglisi, A Ranjan, N Raghavan, K Shubhakar, J Molina, ...
Journal of Applied Physics 122 (2), 2017
12 2017 Functionality demonstration of a high-density 2.5 v self-aligned split-gate nvm cell embedded into 40nm cmos logic process for automotive microcontrollers LQ Luo, ZQ Teo, YJ Kong, FX Deng, JQ Liu, F Zhang, XS Cai, KM Tan, ...
2016 IEEE 8th International Memory Workshop (IMW), 1-4, 2016
12 2016 Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer K Shubhakar, N Raghavan, SS Kushvaha, M Bosman, ZR Wang, ...
Microelectronics Reliability 54 (9-10), 1712-1717, 2014
10 2014 40nm embedded self-aligned split-gate flash technology for high-density automotive microcontrollers D Shum, LQ Luo, YJ Kong, FX Deng, X Qu, ZQ Teo, JQ Liu, F Zhang, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
9 2017 
Nagarajan RaghavanAssociate Professor, Singapore University of Technology & Design (SUTD)Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα sutd.edu.sg
