Nikolaos Makris
Nikolaos Makris
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα electronics.tuc.gr - Αρχική σελίδα
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Παρατίθεται από
Παρατίθεται από
Έτος
CMOS small-signal and thermal noise modeling at high frequencies
A Antonopoulos, M Bucher, K Papathanasiou, N Mavredakis, N Makris, ...
IEEE transactions on electron devices 60 (11), 3726-3733, 2013
342013
Analog performance of advanced CMOS in weak, moderate, and strong inversion
M Bucher, G Diles, N Makris
Proceedings of the 17th International Conference Mixed Design of Integrated …, 2010
122010
CMOS RF noise, scaling, and compact modeling for RFIC design
A Antonopoulos, M Bucher, K Papathanasiou, N Makris, RK Sharma, ...
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 53-56, 2013
112013
Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout
M Bucher, A Nikolaou, A Papadopoulou, N Makris, L Chevas, G Borghello, ...
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018
102018
Charge-based modeling of long-channel symmetric double-gate junction FETs—Part II: Total charges and transcapacitances
N Makris, F Jazaeri, JM Sallese, M Bucher
IEEE Transactions on Electron Devices 65 (7), 2751-2756, 2018
72018
Charge-based modeling of long-channel symmetric double-gate junction FETs—Part I: Drain current and transconductances
N Makris, F Jazaeri, JM Sallese, RK Sharma, M Bucher
IEEE Transactions on Electron Devices 65 (7), 2744-2750, 2018
72018
Charge-based model for junction FETs
F Jazaeri, N Makris, A Saeidi, M Bucher, JM Sallese
IEEE Transactions on Electron Devices 65 (7), 2694-2698, 2018
72018
Charge-Based Compact Model for Bias-Dependent Variability of 1/ Noise in MOSFETs
N Mavredakis, N Makris, P Habas, M Bucher
IEEE Transactions on Electron Devices 63 (11), 4201-4208, 2016
72016
Extending a 65nm CMOS process design kit for high total ionizing dose effects
A Nikolaou, M Bucher, N Makris, A Papadopoulou, L Chevas, G Borghello, ...
2018 7th International Conference on Modern Circuits and Systems …, 2018
62018
Variability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETs
M Bucher, A Nikolaou, N Mavredakis, N Makris, M Coustans, J Lolivier, ...
2017 International Conference of Microelectronic Test Structures (ICMTS), 1-4, 2017
62017
Investigation of the dose-and time-dependence of the induction of different types of cell death in a small‑cell lung cancer cell line: Implementation of the repairable …
N Makris, M Edgren, P Mavroidis, BK Lind
International journal of oncology 42 (6), 2019-2027, 2013
62013
Modeling of High Total Ionizing Dose (TID) Effects for Enclosed Layout Transistors in 65 nm Bulk CMOS
A Nikolaou, M Bucher, N Makris, A Papadopoulou, L Chcvas, G Borghello, ...
2018 International Semiconductor Conference (CAS), 133-136, 2018
42018
Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS
L Chevas, A Nikolaou, M Bucher, N Makris, A Papadopoulou, A Zografos, ...
2018 25th International Conference" Mixed Design of Integrated Circuits and …, 2018
42018
Open‐source circuit simulation tools for RF compact semiconductor device modelling
W Grabinski, M Brinson, P Nenzi, F Lannutti, N Makris, A Antonopoulos, ...
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2014
42014
Temperature scaling of CMOS analog design parameters
N Makris, M Bucher
2012 16th IEEE Mediterranean Electrotechnical Conference, 187-190, 2012
42012
System level analysis of a direct-conversion WiMAX receiver at 5.3 GHz and corresponding mixer design
A Antonopoulos, N Mavredakis, N Makris, M Bucher
2008 15th International Conference on Mixed Design of Integrated Circuits …, 2008
42008
Modelling of 4H-SiC VJFETs with self-aligned contacts
K Zekentes, K Vassilevski, A Stavrinidis, G Konstantinidis, M Kayambaki, ...
Materials Science Forum 858, 913-916, 2016
32016
A compact model for static and dynamic operation of symmetric double-gate junction FETs
N Makris, M Bucher, F Jazaeri, JM Sallese
2018 48th European Solid-State Device Research Conference (ESSDERC), 238-241, 2018
22018
Cross-section doping topography of 4H-SiC VJFETs by various techniques
K Tsagaraki, M Nafouti, H Peyre, K Vamvoukakis, N Makris, M Kayambaki, ...
Materials Science Forum 924, 653-656, 2018
22018
Modeling of high‐frequency noise of silicon CMOS transistors for RFIC design
A Antonopoulos, M Bucher, K Papathanasiou, N Makris, N Mavredakis, ...
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2014
22014
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