Athanasios Dimoulas
Athanasios Dimoulas
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Fermi-level pinning and charge neutrality level in germanium
A Dimoulas, P Tsipas, A Sotiropoulos, EK Evangelou
Applied physics letters 89 (25), 252110, 2006
Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag (111)
P Tsipas, S Kassavetis, D Tsoutsou, E Xenogiannopoulou, E Golias, ...
Applied Physics Letters 103 (25), 251605, 2013
high- gate dielectrics on Ge (100) by atomic oxygen beam deposition
A Dimoulas, G Mavrou, G Vellianitis, E Evangelou, N Boukos, M Houssa, ...
Applied Physics Letters 86 (3), 032908, 2005
Silicene: a review of recent experimental and theoretical investigations
M Houssa, A Dimoulas, A Molle
Journal of Physics: Condensed Matter 27 (25), 253002, 2015
BJ v. Wees, TM Klapwijk, W. vd Graaf, and G. Borghs
A Dimoulas, JP Heida
Phys. Rev. Lett 74, 602, 1995
Structural and electrical quality of the high-k dielectric on Si (001): Dependence on growth parameters
A Dimoulas, G Vellianitis, A Travlos, V Ioannou-Sougleridis, ...
Journal of Applied Physics 92 (1), 426-431, 2002
Electrical properties of and gate dielectrics for germanium metal-oxide-semiconductor devices
G Mavrou, S Galata, P Tsipas, A Sotiropoulos, Y Panayiotatos, ...
Journal of Applied Physics 103 (1), 014506, 2008
Modeling of negatively charged states at the Ge surface and interfaces
P Tsipas, A Dimoulas
Applied Physics Letters 94 (1), 012114, 2009
Evidence for hybrid surface metallic band in (4× 4) silicene on Ag (111)
D Tsoutsou, E Xenogiannopoulou, E Golias, P Tsipas, A Dimoulas
Applied Physics Letters 103 (23), 231604, 2013
Advanced gate stacks for high-mobility semiconductors
A Dimoulas, E Gusev, PC McIntyre, M Heyns
Springer Science & Business Media, 2008
High-quality, large-area MoSe 2 and MoSe 2/Bi 2 Se 3 heterostructures on AlN (0001)/Si (111) substrates by molecular beam epitaxy
E Xenogiannopoulou, P Tsipas, KE Aretouli, D Tsoutsou, SA Giamini, ...
Nanoscale 7 (17), 7896-7905, 2015
Inorganic–organic core–shell titania nanoparticles for efficient visible light activated photocatalysis
NG Moustakas, AG Kontos, V Likodimos, F Katsaros, N Boukos, ...
Applied Catalysis B: Environmental 130, 14-24, 2013
Strain-induced changes to the electronic structure of germanium
H Tahini, A Chroneos, RW Grimes, U Schwingenschlögl, A Dimoulas
Journal of Physics: Condensed Matter 24 (19), 195802, 2012
HfO2 as gate dielectric on Ge: Interfaces and deposition techniques
M Caymax, S Van Elshocht, M Houssa, A Delabie, T Conard, M Meuris, ...
Materials Science and Engineering: B 135 (3), 256-260, 2006
Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
A Ritenour, A Khakifirooz, DA Antoniadis, RZ Lei, W Tsai, A Dimoulas, ...
Applied physics letters 88 (13), 132107, 2006
Complex admittance analysis for high-κ dielectric stacks
G Apostolopoulos, G Vellianitis, A Dimoulas, JC Hooker, T Conard
Applied physics letters 84 (2), 260-262, 2004
Direct heteroepitaxy of crystalline on Si (001) for high-k gate dielectric applications
A Dimoulas, A Travlos, G Vellianitis, N Boukos, K Argyropoulos
Journal of Applied Physics 90 (8), 4224-4230, 2001
Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy
KE Aretouli, P Tsipas, D Tsoutsou, J Marquez-Velasco, ...
Applied Physics Letters 106 (14), 143105, 2015
Ch. Dieker, EK Evangelou, S. Galata, M. Houssa, and MM Heyns
A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ...
Thin Solid Films 515, 6337, 2007
Intrinsic carrier effects in –Ge metal–insulator–semiconductor capacitors
A Dimoulas, G Vellianitis, G Mavrou, EK Evangelou, A Sotiropoulos
Applied Physics Letters 86 (22), 223507, 2005
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