Joe McGlone

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Citations	1373	1318
h-index	14	14
i10-index	16	16

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Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityVerified email at osu.edu
Steven RingelThe Ohio State UniversityVerified email at osu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityVerified email at osu.edu
Chandan JoishiPost Doctoral Researcher, ECE, The Ohio State UniversityVerified email at osu.edu
Nidhin Kurian KalarickalAssistant Professor, Electrical Computer and Energy Engineering, Arizona State UniversityVerified email at asu.edu
Wyatt MooreGraduate Research Assistant, The Ohio State UniversityVerified email at buckeyemail.osu.edu
Saurabh LodhaProfessor, Electrical Engineering, IIT BombayVerified email at ee.iitb.ac.in
Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUVerified email at osu.edu
Zixuan FengThe Ohio State UniversityVerified email at osu.edu
Anhar BhuiyanAssistant Professor, Electrical and Computer Engineering, University of Massachusetts LowellVerified email at uml.edu
Yuewei ZhangUCSBVerified email at ucsb.edu
Dr. Hemant GhadiOhio State UniversityVerified email at osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityVerified email at osu.edu
Sriram KrishnamoorthyUniversity of California, Santa BarbaraVerified email at ucsb.edu
Wu Lu, ProfessorThe Ohio State UniversityVerified email at osu.edu
Christine M. JacksonDepartment of Electrical and Computer Engineering, The Ohio State UniveristyVerified email at osu.edu
Jared M JohnsonThe Ohio State UniversityVerified email at thermofisher.com
Shahadat Hasan SohelIntelVerified email at intel.com
wenyuan sunVerified email at osu.edu

Joe McGlone

Research Scientist, ECE and IMR at Ohio State University

Verified email at osu.edu - Homepage

Ga2O3


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Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	309	2017
-Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055, 2019	154	2019
Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ... Applied Physics Letters 115 (25), 2019	129	2019
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃ Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020	102	2020
Trapping Effects in Si 𝛿-Doped β-Ga2O3 MESFETs on an Fe-Doped β-Ga2O3 Substrate JF Mcglone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ... IEEE Electron Device Letters 39 (7), 2018	99	2018
Evaluation of Low-Temperature Saturation Velocity in -(Al_xGa_1–x)₂O₃/Ga₂O₃ Modulation-Doped Field-Effect Transistors Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ... IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019	90	2019
High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ... Journal of Applied Physics 127 (21), 2020	84	2020
Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ... Applied Physics Letters 113 (12), 2018	71	2018
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ... APL Materials 8 (2), 2020	64	2020
Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ... Applied Physics Letters 115 (15), 2019	58	2019
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ... IEEE Transactions on Electron Devices 68 (1), 29-35, 2020	57	2020
Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart Applied Physics Letters 115 (15), 2019	53	2019
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3 H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ... Applied Physics Letters 117 (17), 2020	34	2020
APL Mater. 8, 021111 (2020) H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, A Bhuiyan, ...	15
Velocity saturation in La-doped BaSnO3 thin films H Chandrasekar, J Cheng, T Wang, Z Xia, NG Combs, CR Freeze, ... Applied Physics Letters 115 (9), 2019	13	2019
Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3 JF McGlone, H Ghadi, E Cornuelle, A Armstrong, G Burns, Z Feng, ... Journal of Applied Physics 133 (4), 2023	11	2023
β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy AV Dheenan, JF McGlone, NK Kalarickal, HL Huang, M Brenner, J Hwang, ... Applied Physics Letters 121 (11), 2022	9	2022
Ferroelectric HfO2 Thin Films for FeFET Memory Devices JF McGlone Journal of the Microelectronic Engineering Conference 22 (1), 24, 2016	6	2016
Demonstration of self-aligned β-Ga2O3 δ-doped MOSFETs with current density> 550 mA/mm NK Kalarickal, A Dheenan, JF McGlone, S Dhara, M Brenner, SA Ringel, ... Applied Physics Letters 122 (11), 2023	3	2023
Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3 H Ghadi, JF McGlone, E Cornuelle, Z Feng, Y Zhang, L Meng, H Zhao, ... APL Materials 10 (10), 2022	3	2022

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