| Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ... Nature 468 (7321), 286-289, 2010 | 469 | 2010 |
| nBn structure based on InAs∕ GaSb type-II strained layer superlattices JB Rodriguez, E Plis, G Bishop, YD Sharma, H Kim, LR Dawson, ... Applied Physics Letters 91 (4), 2007 | 331 | 2007 |
| Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices HS Kim, OO Cellek, ZY Lin, ZY He, XH Zhao, S Liu, H Li, YH Zhang Applied Physics Letters 101 (16), 2012 | 178 | 2012 |
| Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna Applied Physics Letters 96 (23), 2010 | 175 | 2010 |
| Mid-IR focal plane array based on type-II InAs∕ GaSb strain layer superlattice detector with nBn design HS Kim, E Plis, JB Rodriguez, GD Bishop, YD Sharma, LR Dawson, ... Applied Physics Letters 92 (18), 2008 | 149 | 2008 |
| Bias dependent dual band response from InAs∕ Ga (In) Sb type II strain layer superlattice detectors A Khoshakhlagh, JB Rodriguez, E Plis, GD Bishop, YD Sharma, HS Kim, ... Applied Physics Letters 91 (26), 2007 | 122 | 2007 |
| Quantum confinement effects in nanoscale-thickness InAs membranes K Takei, H Fang, SB Kumar, R Kapadia, Q Gao, M Madsen, HS Kim, ... Nano letters 11 (11), 5008-5012, 2011 | 120 | 2011 |
| Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors K Takei, M Madsen, H Fang, R Kapadia, S Chuang, HS Kim, CH Liu, ... Nano letters 12 (4), 2060-2066, 2012 | 117 | 2012 |
| Ultrathin body InAs tunneling field-effect transistors on Si substrates AC Ford, CW Yeung, S Chuang, HS Kim, E Plis, S Krishna, C Hu, A Javey Applied Physics Letters 98 (11), 2011 | 112 | 2011 |
| Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation HS Kim, E Plis, A Khoshakhlagh, S Myers, N Gautam, YD Sharma, ... Applied Physics Letters 96 (3), 2010 | 91 | 2010 |
| Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ... Semiconductor Science and Technology 25 (8), 085010, 2010 | 86 | 2010 |
| Type II InAs∕ GaSb strain layer superlattice detectors with p-on-n polarity E Plis, JB Rodriguez, HS Kim, G Bishop, YD Sharma, LR Dawson, ... Applied Physics Letters 91 (13), 2007 | 79 | 2007 |
| Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation HS Kim, E Plis, N Gautam, S Myers, Y Sharma, LR Dawson, S Krishna Applied Physics Letters 97 (14), 2010 | 71 | 2010 |
| nBn detectors based on InAs∕ GaSb type-II strain layer superlattice G Bishop, E Plis, JB Rodriguez, YD Sharma, HS Kim, LR Dawson, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 66 | 2008 |
| Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness K Takei, S Chuang, H Fang, R Kapadia, CH Liu, J Nah, H Sul Kim, E Plis, ... Applied Physics Letters 99 (10), 2011 | 56 | 2011 |
| Long-wave InAs/GaSb superlattice detectors based on nBn and pin designs A Khoshakhlagh, S Myers, HS Kim, E Plis, N Gautam, SJ Lee, SK Noh, ... IEEE Journal of Quantum Electronics 46 (6), 959-964, 2010 | 48 | 2010 |
| Barrier engineered infrared photodetectors based on type-II InAs/GaSb strained layer superlattices N Gautam, S Myers, AV Barve, B Klein, EP Smith, DR Rhiger, HS Kim, ... IEEE Journal of Quantum Electronics 49 (2), 211-217, 2012 | 46 | 2012 |
| Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors E Plis, MN Kutty, S Myers, HS Kim, N Gautam, LR Dawson, S Krishna Infrared Physics & Technology 54 (3), 252-257, 2011 | 45 | 2011 |
| High operating temperature interband cascade focal plane arrays ZB Tian, SE Godoy, HS Kim, T Schuler-Sandy, JA Montoya, S Krishna Applied Physics Letters 105 (5), 2014 | 43 | 2014 |
| Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors E Plis, HS Kim, G Bishop, S Krishna, K Banerjee, S Ghosh Applied Physics Letters 93 (12), 2008 | 41 | 2008 |
