Caroline Bonafos
Caroline Bonafos
Verified email at
Cited by
Cited by
Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in
B Garrido Fernández, M Lopez, C Garcıa, A Pérez-Rodrıguez, JR Morante, ...
Journal of Applied Physics 91 (2), 798-807, 2002
Ostwald ripening of end-of-range defects in silicon
C Bonafos, D Mathiot, A Claverie
Journal of Applied Physics 83 (6), 3008-3017, 1998
Extended defects in shallow implants
A Claverie, B Colombeau, B De Mauduit, C Bonafos, X Hebras, ...
Applied Physics A 76, 1025-1033, 2003
Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in
M López, B Garrido, C Garcıa, P Pellegrino, A Pérez-Rodrıguez, ...
Applied Physics Letters 80 (9), 1637-1639, 2002
Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation
C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis
P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
Stress measurements of germanium nanocrystals embedded in silicon oxide
A Wellner, V Paillard, C Bonafos, H Coffin, A Claverie, B Schmidt, ...
Journal of Applied Physics 94 (9), 5639-5642, 2003
Correlation between structural and optical properties of Si nanocrystals embedded in The mechanism of visible light emission
B Garrido, M Lopez, O Gonzalez, A Pérez-Rodrıguez, JR Morante, ...
Applied Physics Letters 77 (20), 3143-3145, 2000
Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis
P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
Kinetic study of group IV nanoparticles ion beam synthesized in SiO2
C Bonafos, B Colombeau, A Altibelli, M Carrada, GB Assayag, B Garrido, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2001
White luminescence from and ion-implanted films
A Pérez-Rodrıguez, O González-Varona, B Garrido, P Pellegrino, ...
Journal of Applied Physics 94 (1), 254-262, 2003
Imaging Si nanoparticles embedded in SiO2 layers by (S) TEM-EELS
S Schamm, C Bonafos, H Coffin, N Cherkashin, M Carrada, GB Assayag, ...
Ultramicroscopy 108 (4), 346-357, 2008
Thermal evolution of extended defects in implanted Si:: impact on dopant diffusion
A Claverie, B Colombeau, GB Assayag, C Bonafos, F Cristiano, M Omri, ...
Materials Science in Semiconductor Processing 3 (4), 269-277, 2000
Phosphorus doping of ultra-small silicon nanocrystals
M Perego, C Bonafos, M Fanciulli
Nanotechnology 21 (2), 025602, 2009
Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO2
B Garrido, M López, A Pérez-Rodrıguez, C Garcıa, P Pellegrino, R Ferré, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
Optical properties of silicon nanocrystal LEDs
J De La Torre, A Souifi, A Poncet, C Busseret, M Lemiti, G Bremond, ...
Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 326-330, 2003
Transient enhanced diffusion of boron in presence of end-of-range defects
C Bonafos, M Omri, B De Mauduit, G BenAssayag, A Claverie, D Alquier, ...
Journal of applied physics 82 (6), 2855-2861, 1997
On the relation between dopant anomalous diffusion in Si and end-of-range defects
A Claverie, L Laânab, C Bonafos, C Bergaud, A Martinez, D Mathiot
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
Transmission electron microscopy measurements of the injection distances in nanocrystal-based memories
GB Assayag, C Bonafos, M Carrada, A Claverie, P Normand, D Tsoukalas
Applied physics letters 82 (2), 200-202, 2003
The system can't perform the operation now. Try again later.
Articles 1–20