lallement
lallement
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα unistra.fr
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VHDL-AMS and Verilog-AMS as alternative hardware description languages for efficient modeling of multidiscipline systems
F Pêcheux, C Lallement, A Vachoux
IEEE transactions on Computer-Aided design of integrated Circuits and …, 2005
2242005
Charge-based modeling of junctionless double-gate field-effect transistors
JM Sallese, N Chevillon, C Lallement, B Iniguez, F Prégaldiny
IEEE Transactions on Electron Devices 58 (8), 2628-2637, 2011
2152011
A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism
JM Sallese, F Krummenacher, F Prégaldiny, C Lallement, A Roy, C Enz
Solid-State Electronics 49 (3), 485-489, 2005
1972005
CNTFET modeling and reconfigurable logic-circuit design
I O'Connor, J Liu, F Gaffiot, F Prégaldiny, C Lallement, C Maneux, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2365-2379, 2007
1872007
An efficient parameter extraction methodology for the EKV MOST model
M Bucher, C Lallement, CC Enz
Proceedings of International Conference on Microelectronic Test Structures …, 1996
1211996
The EPFL-EKV MOSFET model equations for simulation
M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher
Version 2.6, 1998
1101998
Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects
B Diagne, F Prégaldiny, C Lallement, JM Sallese, F Krummenacher
Solid-State Electronics 52 (1), 99-106, 2008
642008
A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs
F Prégaldiny, C Lallement, D Mathiot
Solid-State Electronics 46 (12), 2191-2198, 2002
632002
Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model
F Pregaldiny, C Lallement, D Mathiot
Solid-State Electronics 48 (5), 781-787, 2004
612004
Accurate MOS modelling for analog circuit simulation using the EKV model
M Bucher, C Lallement, C Enz, F Krummenacher
1996 IEEE International Symposium on Circuits and Systems. Circuits and …, 1996
531996
Design-oriented compact models for CNTFETs
F Pregaldiny, C Lallement, JB Kammerer
International Conference on Design and Test of Integrated Systems in …, 2006
522006
Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation
JM Sallese, M Bucher, C Lallement
Solid-State Electronics 44 (6), 905-912, 2000
502000
An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs
F Prégaldiny, C Lallement, R van Langevelde, D Mathiot
Solid-State Electronics 48 (3), 427-435, 2004
482004
Generalization of the concept of equivalent thickness and capacitance to multigate MOSFETs modeling
N Chevillon, JM Sallese, C Lallement, F Prégaldiny, M Madec, J Sedlmeir, ...
IEEE Transactions on Electron Devices 59 (1), 60-71, 2011
412011
The EKV 3.0 compact MOS transistor model: accounting for deep-submicron aspects
M Bucher, C Enz, F Krummenacher, JM Sallese, C Lallement, AS Porret
Proc. MSM Int. Conf., Nanotech 2002, 670-673, 2002
392002
Modelling and characterization of non-uniform substrate doping
C Lallement, M Bucher, C Enz
Solid-State Electronics 41 (12), 1857-1861, 1997
391997
The EPFL-EKV MOSFET model equations for simulation, Version 2.6
M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher
Technical Report, EPFL, 1997
391997
Physics-based compact model for ultra-scaled FinFETs
A Yesayan, F Prégaldiny, N Chevillon, C Lallement, JM Sallese
Solid-state electronics 62 (1), 165-173, 2011
372011
Scalable gm/I based MOSFET model
M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher
Int. Semicond. Dev. Research Symp.(ISDRS’97), 615-618, 1997
361997
Compact modeling and applications of CNTFETs for analog and digital circuit design
F Pregaldiny, JB Kammerer, C Lallement
2006 13th IEEE International Conference on Electronics, Circuits and Systems …, 2006
322006
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