A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ... Nature communications 7 (1), 13575, 2016 | 602 | 2016 |
Electrical Spin Driving by -Matrix Modulation in Spin-Orbit Qubits A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ... Physical review letters 120 (13), 137702, 2018 | 135 | 2018 |
Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ... npj quantum information 4 (1), 6, 2018 | 107 | 2018 |
Few electron limit of n-type metal oxide semiconductor single electron transistors E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ... Nanotechnology 23 (21), 215204, 2012 | 84 | 2012 |
SOI technology for quantum information processing S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, ... 2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2016 | 49 | 2016 |
Single layer MoS2 nanoribbon field effect transistor D Kotekar-Patil, J Deng, SL Wong, CS Lau, KEJ Goh Applied Physics Letters 114 (1), 2019 | 47 | 2019 |
Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction H Bohuslavskyi, D Kotekar-Patil, R Maurand, A Corna, S Barraud, ... Applied Physics Letters 109 (19), 2016 | 41 | 2016 |
Si CMOS platform for quantum information processing L Hutin, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, X Jehl, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 34 | 2016 |
Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry A Crippa, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, AO Orlov, ... Nano letters 17 (2), 1001-1006, 2017 | 33 | 2017 |
Toward valley‐coupled spin qubits KEJ Goh, F Bussolotti, CS Lau, D Kotekar‐Patil, ZE Ooi, JY Chee Advanced Quantum Technologies 3 (6), 1900123, 2020 | 26 | 2020 |
Quasiballistic quantum transport through Ge/Si core/shell nanowires D Kotekar-Patil, BM Nguyen, J Yoo, SA Dayeh, SM Frolov Nanotechnology 28 (38), 385204, 2017 | 20 | 2017 |
Pauli spin blockade in CMOS double quantum dot devices D Kotekar-Patil, A Corna, R Maurand, A Crippa, A Orlov, S Barraud, ... Phys. Status Solidi B 254, No. 3, 1600581 (2017), 2017 | 20 | 2017 |
Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons D Kotekar-Patil, J Deng, SL Wong, KEJ Goh ACS Applied Electronic Materials 1 (11), 2202-2207, 2019 | 17 | 2019 |
MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor N Sharma, S Kumar, A Gupta, SB Dolmanan, DSK Patil, ST Tan, ... Sensors and Actuators A: Physical 342, 113647, 2022 | 15 | 2022 |
Mass production of silicon MOS-SETs: Can we live with nano-devicesą variability? X Jehl, B Roche, M Sanquer, B Voisin, R Wacquez, V Deshpande, ... Procedia Computer Science 7, 266-268, 2011 | 10 | 2011 |
SOI platform for spin qubits S De Franceschi, R Maurand, A Corna, D Kotekar-Patil, X Jehl, ... 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 4 | 2016 |
Discrete Charging in Polysilicon Gates of Single Electron Transistors D Kotekar-Patil, S Jauerneck, D Wharam, D Kern, X Jehl, R Wacquez, ... arXiv preprint arXiv:1401.1237, 2014 | 3 | 2014 |
Microstructural characterization of AlxGa1− xN/GaN high electron mobility transistor layers on 200 mm Si (111) substrates Z Aabdin, Z Mahfoud, AS Razeen, HK Hui, DK Patil, G Yuan, J Ong, ... Applied Physics Letters 123 (14), 2023 | 2 | 2023 |
Single layer MoS D Kotekar-Patil, J Deng, SL Wong, CS Lau, KEJ Goh Appl. Phys. Lett 114 (1), 2019 | 2 | 2019 |
Excited state spectroscopy and spin splitting in atomically thin quantum dots P Kumar, H Kim, S Tripathy, K Watanabe, T Taniguchi, KS Novoselov, ... arXiv preprint arXiv:2303.15425, 2023 | 1 | 2023 |