Paul Fons
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Understanding the phase-change mechanism of rewritable optical media
AV Kolobov, P Fons, AI Frenkel, AL Ankudinov, J Tominaga, T Uruga
Nature materials 3 (10), 703-708, 2004
Interfacial phase-change memory
RE Simpson, P Fons, AV Kolobov, T Fukaya, M Krbal, T Yagi, J Tominaga
Nature nanotechnology 6 (8), 501-505, 2011
ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications
K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki
Thin Solid Films 431, 369-372, 2003
Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5
RE Simpson, M Krbal, P Fons, AV Kolobov, J Tominaga, T Uruga, ...
Nano letters 10 (2), 414-419, 2010
Uniaxial locked epitaxy of ZnO on the face of sapphire
P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ...
Applied Physics Letters 77 (12), 1801-1803, 2000
Growth of high-quality epitaxial ZnO films on -Al2O3
P Fons, K Iwata, S Niki, A Yamada, K Matsubara
Journal of Crystal Growth 201, 627-632, 1999
Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE
K Iwata, P Fons, A Yamada, K Matsubara, S Niki
Journal of Crystal Growth 209 (2-3), 526-531, 2000
Distortion-triggered loss of long-range order in solids with bonding energy hierarchy
AV Kolobov, M Krbal, P Fons, J Tominaga, T Uruga
Nature chemistry 3 (4), 311-316, 2011
Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials
KS Andrikopoulos, SN Yannopoulos, AV Kolobov, P Fons, J Tominaga
Journal of Physics and Chemistry of Solids 68 (5-6), 1074-1078, 2007
Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy
K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ...
Applied physics letters 79 (25), 4139-4141, 2001
Na-induced variations in the structural, optical, and electrical properties of Cu (In, Ga) Se2 thin films
S Ishizuka, A Yamada, MM Islam, H Shibata, P Fons, T Sakurai, K Akimoto, ...
Journal of applied physics 106 (3), 2009
Ferroelectric Order Control of the Dirac‐Semimetal Phase in GeTe‐Sb2Te3 Superlattices
J Tominaga, AV Kolobov, P Fons, T Nakano, S Murakami
Advanced Materials Interfaces 1 (1), 1300027, 2014
ZnO growth on Si by radical source MBE
K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ...
Journal of Crystal Growth 214, 50-54, 2000
Band gap energies of bulk, thin-film, and epitaxial layers of and
S Chichibu, T Mizutani, K Murakami, T Shioda, T Kurafuji, H Nakanishi, ...
Journal of Applied Physics 83 (7), 3678-3689, 1998
Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO
P Fons, H Tampo, AV Kolobov, M Ohkubo, S Niki, J Tominaga, R Carboni, ...
Physical review letters 96 (4), 045504, 2006
Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness
S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ...
Solar energy materials and solar cells 87 (1-4), 541-548, 2005
Band-gap modified Al-doped Zn1− xMgxO transparent conducting films deposited by pulsed laser deposition
K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki
Applied physics letters 85 (8), 1374-1376, 2004
Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures
H Tampo, H Shibata, K Maejima, A Yamada, K Matsubara, P Fons, ...
Applied Physics Letters 93 (20), 2008
Local structure of crystallized GeTe films
AV Kolobov, J Tominaga, P Fons, T Uruga
Applied physics letters 82 (3), 382-384, 2003
Two-dimensional electron gas in Zn polar ZnMgO∕ ZnO heterostructures grown by radical source molecular beam epitaxy
H Tampo, H Shibata, K Matsubara, A Yamada, P Fons, S Niki, ...
Applied physics letters 89 (13), 2006
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